30v p - channel enhancement mode mosfet LT9435AC 01 rev.1, nov . 2 010 parameter symbol 10 secs steady state unit drainsource voltage v dss 30 v gatesource voltage v gss 20 v continuous drain current t a =25 i d 5.3 a pulsed drain current 1) i dm 20 a maximum power dissipation t a =25 p d 2.5 w operating junction temperature t j 55 to 150 junctiontocase thermal resistance r jc 28 /w t Q 10 sec 34 junctiontoambient thermal resistance* r ja steady state 62 /w general description the LT9435AC is the pchannel logic enhancement mod e power field effect transistors, using high cell density, dmos trench technology. this high density process is especially tailored to minimize onstate resistance. these devices are particularly suited for low volta ge application such as cellular phone, notebook computer power manageme nt and other battery powered circuits, and lower power loss that are needed in a features 1. r ds(on) Q 40m @v gs =10v 2. r ds(on) Q 60m @v gs =4.5v pin configuration (sop8) top view absolute maximum ratings (t a =25 unless otherwise noted) *the device mounted on 1in2 fr4 board with 2 oz cop per ordering information : LT9435AC (pbfree)
30v p - channel enhancement mode mosfet LT9435AC 02 rev.1, nov . 2 010 notes: a. pulse test: pulse width Q 300us, duty cycle Q 2%, guaranteed by design, not subject to production testing symbol parameter limit min typ max unit static bv dss drainsource breakdown voltage v gs =0v, i d =250 a 30 v v gs(th) gate threshold voltage v ds =v gs , i d =250 a 1.0 2.2 3.0 v i gss gate leakage current v ds =0v, v gs =20v 100 na i dss zero gate voltage drain current v ds =24 v gs =0v 1 a v gs =10v, i d = 5.3a 31 40 r ds(on) drainsource onstate resistance a v gs =4.5v, i d = 4.2a 40 60 m dynamic rg gate resistance v ds =0v, v gs =0v, f=1mhz 5.5 ciss input capacitance 840 960 coss output capacitance 120 crss reverse transfer capacitance v ds =15v, v gs =0v, f=1.0mhz 35 pf qg total gate charge 21 25 qgs gatesource charge 6 qgd gatedrain charge v ds =15v, v gs =10v, i d =5.3a 5.4 nc t d(on) turnon delay time 32 40 tr turnon rise time 13 16 t d(off) turnoff delay time 58 75 t f turnoff fall time v dd =15v, r l =15 i d =1a, v gen =10v r g =6 6 9 ns electrical characteristics (t a =25 unless otherwise specified)
30v p - channel enhancement mode mosfet LT9435AC 03 rev.1, nov . 2 010 typical characteristics (t j =25 noted)
30v p - channel enhancement mode mosfet LT9435AC 04 rev.1, nov . 2 010 typical characteristics (t j =25 noted)
30v p - channel enhancement mode mosfet LT9435AC 05 rev.1, nov . 2 010 notes: 1. pkg all surfaces are ra0.8-1.2um. 2. mold flash, protrusions or gate burrs shall not exceed 0.15 mm in total (both sides). sop-8 package outline
30v p - channel enhancement mode mosfet LT9435AC 06 rev.1, nov . 2 010 important notice and disclaimer lsc reserves the right to make changes to this docu ment and its products and specifications at any time without notice. customer s should obtain and confirm the latest product information and specifications befor e final design, purchase or use. lsc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does lsc a ssume any liability for application assistance or customer product design. lsc does not warrant or accept any liability with products which are purchased or used for any u nintended or unauthorized application. no license is granted by implication or otherwise u nder any intellectual property rights of lsc. lsc products are not authorized for use as critical components in life support devices or systems without express written approval of lsc.
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